GaN1 Power Semiconductor Process Technology Now Available for 65V Operation

June 8, 2011
RFMD Announces Qualification of GaN Power Semiconductor Process for 65 Volt Operation

RFMD announces qualification of GaN power semiconductor process for 65 volt operation.

The high reliability power semiconductor process technology supports RFMD's GaN-based power semiconductor product designs and is also available to foundry customers through RFMD's Foundry Services business unit.

Previously, RFMD's GaN1 power semiconductor process technology had been qualified for 48V operation. The increase in operating voltage from 48V to 65V enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and civilian radar applications.

According to Bob Van Buskirk, president of RFMD's Multi-Market Products Group (MPG), having RFMD qualify for the 65V GaN1 power process technology opens to business opportunities for the company.

"The qualification of our 65V GaN1 power process technology enables RFMD to target multiple higher voltage market opportunities across MPG's diversified markets while helping our foundry customers to design smaller periphery die for high power applications," said Van Buskirk.

RFMD's 48V GaN1 process technology is an established performance leader in the high power semiconductor industry, and RFMD's 65V GaN1 process technology moves the performance bar even higher. RFMD's 65V GaN1 process technology demonstrates a Mean-Time-to-Failure (MTTF) of 43 million hours with a channel temperature of 200 degrees Celsius at power densities of 10W. The high reliability power semiconductor process is suited for higher voltage operations in next generation military, radar, and public/defense mobile radio applications.

To learn more about RFMD's Foundry Services business unit contact [email protected].