The gallium aluminum arsenide OD-850WHT infrared light-emitting diode features optical power output ranges from 24 to 28 mW and a wide emission angle. It operates at temperature ranges from -65 to 150 °C. The emitter has peak emission of 850 Nm and an optical half-intensity beam angle of 80°. With no internal coatings, the device can operate without heat sinking and without derating to 80 °C. The device is available in a hermetically sealed, standard two-lead TO-46 package. All surfaces are gold-plated for added durability.
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